参数资料
型号: 25LC160B-I/ST
厂商: Microchip Technology
文件页数: 11/26页
文件大小: 0K
描述: IC EEPROM 16KBIT 10MHZ 8TSSOP
标准包装: 100
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 16K (2K x 8)
速度: 10MHz
接口: SPI 3 线串行
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 管件
产品目录页面: 1449 (CN2011-ZH PDF)
25XX160A/B
2.6
Write Status Register Instruction
See Figure 2-7 for the WRSR timing sequence.
( WRSR )
The Write Status Register instruction ( WRSR ) allows the
TABLE 2-3:
ARRAY PROTECTION
user to write to the nonvolatile bits in the STATUS reg-
ister as shown in Table 2-2. The user is able to select
one of four levels of protection for the array by writing
to the appropriate bits in the STATUS register. The
array is divided up into four segments. The user has the
ability to write-protect none, one, two or all four of the
segments of the array. The partitioning is controlled as
shown in Table 2-3.
The Write-Protect Enable (WPEN) bit is a nonvolatile
bit that is available as an enable bit for the WP pin. The
Write-Protect (WP) pin and the Write-Protect Enable
BP1
0
0
1
1
BP0
0
1
0
1
Array Addresses
Write-Protected
none
upper 1/4
(0600h-07FFh)
upper 1/2
(0400h-07FFh)
all
(0000h-07FFh)
(WPEN) bit in the STATUS register control the
programmable hardware write-protect feature. Hard-
ware write protection is enabled when WP pin is low
and the WPEN bit is high. Hardware write protection is
disabled when either the WP pin is high or the WPEN
bit is low. When the chip is hardware write-protected,
only writes to nonvolatile bits in the STATUS register
are disabled. See Table 2-1 for a matrix of functionality
on the WPEN bit.
FIGURE 2-7:
CS
WRITE STATUS REGISTER TIMING SEQUENCE ( WRSR )
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Instruction
Data to STATUS Register
SI
0
0
0
0
0
0
0
1
7
6
5
4
3
2
1
0
High-Impedance
SO
? 2007 Microchip Technology Inc.
DS21807D-page 11
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