参数资料
型号: 25LC160C-E/P
厂商: Microchip Technology
文件页数: 11/30页
文件大小: 0K
描述: IC SRL EEPROM 2KX8 2.5V 8-PDIP
标准包装: 60
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 16K (2K x 8)
速度: 3MHZ,5MHZ,10MHZ
接口: SPI 3 线串行
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
25XX160C/D
2.6
Write Status Register ( WRSR )
See Figure 2-7 for the WRSR timing sequence.
Instruction
The Write Status Register ( WRSR ) instruction allows the
TABLE 2-3:
ARRAY PROTECTION
user to write to the nonvolatile bits in the STATUS reg-
ister as shown in Table 2-2. The user is able to select
one of four levels of protection for the array by writing
to the appropriate bits in the STATUS register. The
array is divided up into four segments. The user has the
ability to write-protect none, one, two or all four of the
segments of the array. The partitioning is controlled as
shown in Table 2-3.
The Write-Protect Enable (WPEN) bit is a nonvolatile
bit that is available as an enable bit for the WP pin. The
BP1
0
0
1
1
BP0
0
1
0
1
Array Addresses
Write-Protected
none
upper 1/4
(0600h-07FFh)
upper 1/2
(0400h-07FFh)
all
(0000h-07FFh)
Write-Protect (WP) pin and the Write-Protect Enable
(WPEN) bit in the STATUS register control the
programmable hardware write-protect feature. Hard-
ware write protection is enabled when WP pin is low
and the WPEN bit is high. Hardware write protection is
disabled when either the WP pin is high or the WPEN
bit is low. When the chip is hardware write-protected,
only writes to nonvolatile bits in the STATUS register
are disabled. See Table 2-4 for a matrix of functionality
on the WPEN bit.
FIGURE 2-7:
CS
WRITE STATUS REGISTER TIMING SEQUENCE ( WRSR )
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
Instruction
Data to STATUS Register
SI
0
0
0
0
0
0
0
1
7
6
5
4
3
2
1
0
High-Impedance
SO
? 2009 Microchip Technology Inc.
DS22150A-page 11
相关PDF资料
PDF描述
XC6SLX75-3FGG676C IC FPGA SPARTAN 6 74K 676FGGBGA
AMC36DRTI-S93 CONN EDGECARD 72POS DIP .100 SLD
AMC36DREI-S93 CONN EDGECARD 72POS .100 EYELET
ACC60DRTS CONN EDGECARD 120PS .100 DIP SLD
GCB108DHAT CONN EDGECARD 216PS R/A .050 SLD
相关代理商/技术参数
参数描述
25LC160C-H/SN 功能描述:电可擦除可编程只读存储器 16K, 2K X 8,16B PAGE 2.5V SER EE 150C RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
25LC160C-I/MNY 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:16K SPI Bus Serial EEPROM
25LC160C-I/MS 功能描述:电可擦除可编程只读存储器 16K 2K X 8 16B PAGE 2.5V SER EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
25LC160C-I/P 功能描述:电可擦除可编程只读存储器 16K 2K X 8 16B PAGE 2.5V SER EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
25LC160C-I/SN 功能描述:电可擦除可编程只读存储器 16K 2K X 8 16B PAGE 2.5V SER EE IND RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8