参数资料
型号: 25LC640-E/SN
厂商: Microchip Technology
文件页数: 2/24页
文件大小: 0K
描述: IC EEPROM 64KBIT 2MHZ 8SOIC
标准包装: 100
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 64K (8K x 8)
速度: 2MHz
接口: SPI 3 线串行
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
其它名称: 25LC640E/SN
25AA640/25LC640
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V SS ........................................................................................................ -0.6V to V CC + 1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-65°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
? NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
DC CHARACTERISTICS
Industrial (I): T A = -40°C to +85°C V CC = 1.8V to 5.5V
Automotive (E): T A = -40°C to +125°C V CC = 4.5V to 5.5V
Param.
No.
D1
D2
D3
D4
D5
D6
Sym
V IH 1
V IH 2
V IL 1
V IL 2
V OL
V OH
Characteristics
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
Min
2.0
0.7 V CC
-0.3
-0.3
V CC - 0.5
Max
V CC + 1
V CC + 1
0.8
0.2 V CC
0.4
0.2
Units
V
V
V
V
V
V
V
Conditions
V CC ≥ 2.7V (Note 1)
V CC < 2.7V (Note 1)
V CC ≥ 2.7V (Note 1)
V CC < 2.7V (Note 1)
I OL = 2.1 mA
I OL = 1.0 mA, V CC = < 2.5V
I OH = -400 μ A
voltage
D7
D8
I LI
I LO
Input leakage current
Output leakage
±1
±1
μ A
μ A
CS = V CC , V IN = V SS TO V CC
CS = V CC , V OUT = V SS TO V CC
current
D9
C INT
Internal Capacitance
7
pF
T A = 25°C, CLK = 1.0 MHz,
(all inputs and
outputs)
V CC = 5.0V (Note 1)
D10
I CC Read Operating Current
1
500
mA
μ A
V CC = 5.5V; F CLK = 3.0 MHz;
SO = Open
V CC = 2.5V; F CLK = 2.0 MHz;
SO = Open
D11
I CC Write
5
3
mA
mA
V CC = 5.5V
V CC = 2.5V
D12
I CCS
Standby Current
5
1
μ A
μ A
CS = V CC = 5.5V, Inputs tied to V CC or
V SS
CS = V CC = 2.5V, Inputs tied to V CC or
V SS
Note 1:
This parameter is periodically sampled and not 100% tested.
DS21223H-page 2
? 2008 Microchip Technology Inc.
相关PDF资料
PDF描述
XC6SLX100-N3FGG676C IC FPGA SPARTAN-6 676FBGA
SST25LF020A-33-4I-SAE-T IC FLASH SER 2MB 33HZ SPI 8SOIC
XC6SLX100T-N3CSG484C IC FPGA SPARTAN-6 484CSBGA
SST25VF020-20-4I-SAE-T IC FLASH SER 2MB 20MHZ SPI 8SOIC
XC6SLX75-3FG676I IC FPGA SPARTAN 6 676FGGBGA
相关代理商/技术参数
参数描述
25LC640I/P 制造商:未知厂家 制造商全称:未知厂家 功能描述:Serial EEPROM 64K SPI Bus Serial EEPROM(129.03 k)
25LC640-I/P 功能描述:电可擦除可编程只读存储器 8kx8 - 2.5V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
25LC640-I/P 制造商:Microchip Technology Inc 功能描述:EEPROM SERIAL 64K 25LC640 DIP8
25LC640-I/PG 功能描述:电可擦除可编程只读存储器 8kx8 - 2.5V Lead Free Package RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
25LC640I/SN 制造商:未知厂家 制造商全称:未知厂家 功能描述:Serial EEPROM 64K SPI Bus Serial EEPROM(129.03 k)