参数资料
| 型号： | 25LC640X-I/ST |
| 厂商： | Microchip Technology |
| 文件页数： | 2/24页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 64KBIT 2MHZ 8TSSOP |
| 标准包装： | 100 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 2MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 管件 |
| 产品目录页面： | 1450 (CN2011-ZH PDF) |
| 其它名称： | 25LC640X-I/STG 25LC640X-I/STG-ND |
25AA640/25LC640
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V SS ........................................................................................................ -0.6V to V CC + 1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-65°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
? NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
DC CHARACTERISTICS
Industrial (I): T A = -40°C to +85°C V CC = 1.8V to 5.5V
Automotive (E): T A = -40°C to +125°C V CC = 4.5V to 5.5V
Param.
No.
D1
D2
D3
D4
D5
D6
Sym
V IH 1
V IH 2
V IL 1
V IL 2
V OL
V OH
Characteristics
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
Min
2.0
0.7 V CC
-0.3
-0.3
—
—
V CC - 0.5
Max
V CC + 1
V CC + 1
0.8
0.2 V CC
0.4
0.2
—
Units
V
V
V
V
V
V
V
Conditions
V CC ≥ 2.7V (Note 1)
V CC < 2.7V (Note 1)
V CC ≥ 2.7V (Note 1)
V CC < 2.7V (Note 1)
I OL = 2.1 mA
I OL = 1.0 mA, V CC = < 2.5V
I OH = -400 μ A
voltage
D7
D8
I LI
I LO
Input leakage current
Output leakage
—
—
±1
±1
μ A
μ A
CS = V CC , V IN = V SS TO V CC
CS = V CC , V OUT = V SS TO V CC
current
D9
C INT
Internal Capacitance
—
7
pF
T A = 25°C, CLK = 1.0 MHz,
(all inputs and
outputs)
V CC = 5.0V (Note 1)
D10
I CC Read Operating Current
—
—
1
500
mA
μ A
V CC = 5.5V; F CLK = 3.0 MHz;
SO = Open
V CC = 2.5V; F CLK = 2.0 MHz;
SO = Open
D11
I CC Write
—
—
5
3
mA
mA
V CC = 5.5V
V CC = 2.5V
D12
I CCS
Standby Current
—
—
5
1
μ A
μ A
CS = V CC = 5.5V, Inputs tied to V CC or
V SS
CS = V CC = 2.5V, Inputs tied to V CC or
V SS
Note 1:
This parameter is periodically sampled and not 100% tested.
DS21223H-page 2
? 2008 Microchip Technology Inc.
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