参数资料
型号: 26N90
厂商: IXYS Corporation
英文描述: HiPerFET Power MOSFETs
中文描述: HiPerFET功率MOSFET
文件页数: 4/4页
文件大小: 124K
代理商: 26N90
4 - 4
2000 IXYS All rights reserved
IXFK 25N90 IXFX 25N90
IXFK 26N90 IXFX 26N90
V
SD
- Volts
0.0
0.3
0.6
0.9
1.2
1.5
I
D
0
5
10
15
20
25
30
35
40
45
50
Case Temperature -
o
C
-50
-25
0
25
50
75
100
125
150
I
D
0
5
10
15
20
25
30
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R
J
0.001
0.010
0.100
V
DS
- Volts
0
5
10
15
20
25
30
35
40
C
100
1000
10000
Gate Charge - nC
0
50
100
150
200
250
300
350
V
G
0
3
6
9
12
15
Crss
Coss
Ciss
VDS = 500 V
ID = 13 A
IG = 10 mA
f = 1MHz
IXF_26N90
TJ = 125oC
TJ = 25oC
0.300
IXF_25N90
20000
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic
Diode
Figure10. Drain Current vs. Case
Temperature
Figure 11. Transient Thermal Resistance
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