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参数资料
| 型号： | 29F0408RPFS |
| 厂商： | MAXWELL TECHNOLOGIES |
| 元件分类： | PROM |
| 英文描述： | 32 Megabit (4M x 8-Bit) Flash Memory |
| 中文描述： | 4M X 8 FLASH 5V PROM, 35 ns, DFP44 |
| 封装： | DFP-44 |
| 文件页数： | 7/33页 |
| 文件大小： | 941K |
| 代理商： | 29F0408RPFS |
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Alldatasheetsaresubjecttochangewithoutnotice
2002MaxwellTechnologies
Allrightsreserved.
32Megabit(4Mx8-Bit)FlashMemory
29F0408
11.08.02Rev2
NANDF
LASH
T
ECHNICAL
N
OTES
InvalidBlock(s)
Invalidblocks are definedas blocks thatcontainone ormore invalidbits whose reliability is notguaranteedby the
manufacturer. Typically, aninvalidblockwillcontainasinglebadbit. Theinformationregardingtheinvalidblock(s) is
calledas theinvalidblockinformation. Theinvalidblockinformationis writtentothe1storthe2ndpageoftheinvalid
block(s) with00hdata. Devices withinvalidblock(s) have thesame quality levelas devices withall validblocks and
have the same AC and DC characteristics. An invalid block(s) does not affect the performance of valid block(s)
becauseitis isolatedfromthebitlineandthecommonsourcelinebyaselecttransistor. Thesystemdesignmustbe
abletomaskouttheinvalidblock(s) viaaddressmapping.The1stblockoftheNANDFlash, however, isfullyguaran-
teedtobeavalidblock.
IdentifyingInvalidBlock(s)
Alldevicelocations areerased(FFh) exceptlocations wheretheinvalidblockinformationis writtenpriortoshipping.
Since the invalidblockinformationis alsoerasable inmostcases, itis impossible torecoverthe informationonce it
has beenerased. Therefore, the systemmustbe able torecognize the invalidblock(s) basedonthe original invalid
CE lowtostatusoutput
t
CSTO
RHW
Y
t
WHR
t
READID
t
RST
9, 10, 11
--
45
ns
RE hightoWE low
9, 10, 11
0
--
ns
WE hightoRE low
9, 10, 11
60
--
ns
RE accesstime(readID)
9, 10, 11
--
35
ns
Deviceresettingtime(read/program/erase/after
erasesuspend)
1. Not Tested
9, 10, 11
--
5/10/500
μs
2. IfCE goeshighwithin30nsaftertherisingedgeofthelastRE, R/BwillnotreturntoV
OL
.
3. ThetimetoReadydependsonthevalueofthepull-upresistortiedtoR/Bpin.
4. Tobreakthesequentialreadcycle,CE mustbeheldhighforlongerthant
CEH
.
T
ABLE
12. 29F0408V
ALID
B
LOCK1,2
1. Thedevicemayincludevalidblocks.Invalidblocksaredefinedasblocksthatcontainoneormorebadbits.Donottryto
accesstheseinvalidblocksforprogramanderase.Duringitslifetimeof10yearsand/or1mllionprogram/erasecycles, the
mnimumnumberofvalidblocksareguaranteedthoughitsinitialnumbercouldbereduced.(Refertofollowingtechnicalnote)
2. The1stblock, whichisplacedonthe00hblockaddress, isguaranteedtobeavalidblock.
P
ARAMETER
S
YMBOL
M
IN
T
YP
M
AX
U
NIT
ValidBlockNumber
N
VB
502
508
512
Blocks
T
ABLE
11.29F0408AC C
HARACTERISTICS FOR
O
PERATION
(V
CC
=5V ± 10%, T
A
=-40
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 29F040-90 | 制造商:MCNIX 制造商全称:Macronix International 功能描述:4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY |
| 29F040C-55 | 制造商:MCNIX 制造商全称:Macronix International 功能描述:4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| 29F040C-70 | 制造商:MCNIX 制造商全称:Macronix International 功能描述:4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| 29F040C-90 | 制造商:MCNIX 制造商全称:Macronix International 功能描述:4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
| 29F0418-0SR (900PC RL) | 制造商:Laird Technologies Inc 功能描述:SMD,6.1X4.5MM,6A I MAX,83 OHM,GULL WING,4 LINES,-55-+125,BLK - Tape and Reel |
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