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参数资料
| 型号： | 2C3019 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | DIE-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 31K |
| 代理商： | 2C3019 |
Chip Type 2C3019
Geometry 4500
Polarity PNP
Data Sheet No. 2C3019
Generic Packaged Parts:
2N3019, 2N3057
Chip type 2C3019 by Semicoa Semi-
conductors provides performance
similar to these devices.
Product Summary:
Part Numbers:
APPLICATIONS: Designed for general
purpose switching and amplifier applica-
tions.
Features:
Top
Al - 12 k min.
Backside
Au - 6.5 k nom.
Emitter
2.3 mils x 7.0 mils
Base
5.0 mils x 11.0 mils
Die Thickness
Chip Area
Top Surface
30 mils x 30 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
8 mils nominal
Parameter
Test conditions
Min
Max
Unit
BVCBO
IC = 100 A, IE = 0
140
---
V dc
BVEBO
IE = 100 A, IC = 0
7.0
---
V dc
ICBO
VCB = 40 V, IE = 0
---
10
nA
hFE
IC = 150 mA dc, VCE = 10 V
100
300
---
Electrical Characteristics
TA = 25
oC
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 s, duty cycle less than 2%.
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