参数资料
型号: 2MBI150U2A-060
厂商: FUJI ELECTRIC CO LTD
元件分类: IGBT 晶体管
英文描述: 150 A, 600 V, N-CHANNEL IGBT
封装: MODULE-7
文件页数: 3/4页
文件大小: 101K
代理商: 2MBI150U2A-060
2MBI150U2A-060
IGBT Module
Vcc=300V, Ic=150A, VGE=±15V, Tj= 125°C
Reverse bias safe operating area (max.)
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24
, Tj= 25°C
Vcc=300V, Ic=150A, VGE=±15V, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24
, Tj=125°C
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=24
Switching loss vs. Gate resistance (typ.)
+VGE=15V,-VGE <= 15V, RG >= 24
,Tj <= 125°C
10
100
1000
10000
0
100
200
300
Switching
time
:
ton,
tr,
toff,
tf
[
nsec
]
Collector current : Ic [ A ]
tr
tf
toff
ton
10
100
1000
10000
0
100
200
300
Switching
time
:
ton,
tr,
toff,
tf
[
nsec
]
Collector current : Ic [ A ]
tr
tf
toff
ton
10
100
1000
10000
1.0
10.0
100.0
Switching
time
:
ton,
tr,
toff,
tf
[
nsec
]
Gate resistance : Rg [ ]
tr
tf
toff
ton
0
4
8
12
0
100
200
300
Switching
loss
:
Eon,
Eoff,
Err
[
mJ/pulse
]
Collector current : Ic [ A ]
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
5
10
15
20
1.0
10.0
100.0
Switching
loss
:
Eon,
Eoff,
Err
[
mJ/pulse
]
Gate resistance : Rg [ ]
Eoff
Err
Eon
0
100
200
300
400
0
200
400
600
800
Collector
current
:Ic
[
A
]
Collector - Emitter voltage : VCE [ V ]
相关PDF资料
PDF描述
2MBI150UA-120 200 A, 1200 V, N-CHANNEL IGBT
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2MBI300N-120-01B 300 A, 1200 V, N-CHANNEL IGBT
2MBI300N-120-01A 300 A, 1200 V, N-CHANNEL IGBT
2MBI300NB-060-01B 300 A, 600 V, N-CHANNEL IGBT
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