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参数资料
| 型号： | 2MBI150UC-120 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封装： | M234, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 114K |
| 代理商： | 2MBI150UC-120 |
2MBI150UC-120
IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
VGE=0V, f= 1MHz, Tj= 25°C
Vcc=600V, Ic=150A, Tj= 25°C
0
100
200
300
400
012345
Collector
current
:Ic
[A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
100
200
300
400
01
234
5
Collector
current
:Ic
[A]
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
100
200
300
400
012345
Collector
current
:Ic
[A]
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
1015
2025
Collector
-
Emitter
voltage
:
VCE
[
V
]
Gate - Emitter voltage : VGE [ V ]
Ic=300A
Ic=150A
Ic=75A
0.1
1.0
10.0
100.0
010
20
30
Capacitance
:
Cies,
Coes,
Cres
[
nF
]
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
300
600
900
Collector-Emitter
voltage
:VCE
[
200V/div
]
Gate
-
Emitter
voltage
:
VGE
[
5V/div
]
Gate charge : Qg [ nC ]
VGE
VCE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2MBI150VA-060-50 | 制造商:Fuji Electric 功能描述:Dual IGBT Module 150A 600V 650ns |
| 2MBI150VA-120-50 | 制造商:Fuji Electric 功能描述:Dual IGBT Module 150A 1200V 600ns |
| 2MBI150VB-120-50 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:IGBT MODULE (V series) 1200V / 150A / 2 in one package |
| 2MBI200-060 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) |
| 2MBI200-120-01 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:1200V / 200A 2 in one-package |
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