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参数资料
| 型号： | 2MBI200NB-120-01C |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 1/4页 |
| 文件大小： | 198K |
| 代理商： | 2MBI200NB-120-01C |
2MBI200NB-120-01
IGBT Module
1200V / 200A 2 in one-package
Features
VCE(sat) classified for easy parallel connection
High speed switching
Voltage drive
Low inductance module structure
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings
(at Tc=25°C unless otherwise specified)
Item
Symbol
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector
Continuous
IC
current
1ms
IC pulse
-IC
1ms
-IC pulse
Max. power dissipation
PC
Operating temperature
Tj
Storage temperature
Tstg
Isolation voltage
Vis
Screw torque
Mounting *1
Terminals *2
Rating
1200
±20
200
400
200
400
1500
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
Unit
V
A
W
°C
V
Nm
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
–
2.0
–
30
4.5
–
7.5
–
3.3
–
32000
–
11600
–
10320
–
0.65
1.2
–
0.25
0.6
–
0.85
1.5
–
0.35
0.5
–
3.0
–
0.35
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=200mA
VGE=15V, IC=200A
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=200A
VGE=±15V
RG=4.7ohm
IF=200A, VGE=0V
IF=200A
mA
A
V
pF
s
V
s
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
Rth(j-c)
Thermal resistance
Rth(j-c)
Rth(c-f)*
–
0.085
–
0.18
–
0.025
–
IGBT
Diode
the base to cooling fin
°C/W
* : This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
¤ Current control circuit
G1
E1
G2
E2
C1
E2
C2E1
¤
*1 : Recommendable value : 2.5 to 3.5 Nm (M5) or (M6)
*2 : Recommendable value : 3.5 to 4.5 Nm (M6)
VCE(sat) classification
Rank
Lenge
Conditions
F
2.25 to 2.50V
A
2.40 to 2.65V
Ic = 200A
B
2.55 to 2.80V
VGE = 15V
C
2.70 to 2.95V
Tj = 25°C
D
2.85 to 3.10V
E
3.00 to 3.30V
”p^@í
Discontinued
product.
相关PDF资料 |
PDF描述 |
|---|---|
| 2MBI200NB-120-01D | 200 A, 1200 V, N-CHANNEL IGBT |
| 2MBI200NB-120-01 | 200 A, 1200 V, N-CHANNEL IGBT |
| 2MBI200NB-120-01F | 200 A, 1200 V, N-CHANNEL IGBT |
| 2MBI225VN-120-50 | 225 A, 1200 V, N-CHANNEL IGBT |
| 2MBI300N-120 | 300 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2MBI200NE-120 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:IGBT MODULE ( N series ) |
| 2MBI200NT-120-02 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:IGBT module |
| 2MBI200P-140 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:IGBT MODULE ( P-Series ) |
| 2MBI200PB-140 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:IGBT Module |
| 2MBI200PB-140_04 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:IGBT Module |
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