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参数资料
| 型号： | 2MBI200U4B-120 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | IGBT MODULE |
| 中文描述： | 300 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 4/13页 |
| 文件大小： | 434K |
| 代理商： | 2MBI200U4B-120 |
H04-004-03a
MS5F6032
13
4
Storage temperature
Isolation
voltage
Screw
Torque
Mounting (*2)
Terminals (*2)
Reverse recovery time
Lead resistance,
terminal-chip (*3)
(*3) Biggest internal terminal resistance among arm.
Input capacitance
Turn-on time
0.97
-
m
Ω
trr
Items
3.5
AC : 1min.
2500
VAC
V
V
Gate-Emitter voltage
-
us
R lead
1.85
1.95
1.65
1.75
2.00
-
1.80
-
IF=200A
-
Tj=125
o
C
-
-
0.35
Tj=25
o
C
V
-
-
-
VF
(terminal)
VF
(chip)
IF=200A
VGE=0V
Tj=25
o
C
Tj=125
o
C
0.41
0.07
1.00
0.30
tf
-
toff
RG=3.0
Ω
-
0.60
-
tr(i)
VGE=±15V
-
0.03
tr
Ic=200A
-
0.10
22
0.32
-
nF
1.20
us
ton
Vcc=600V
-
Cies
VCE=10V,VGE=0V,f=1MHz
-
-
2.10
V
Ic=200mA
Ic=200A
VGE=15V
VGE(th)
VCE=20V
4.5
8.5
6.5
-
-
-
1.90
VCE=0V
VGE=±20V
-
-
400
2.05
-
-
2.0
VGE=0V
VCE=1200V
Symbols
typ.
max.
Characteristics
min.
Collector current
Ic
Continuous
Tc=25
o
C
Tc=80
o
C
Tc=25
o
C
Tc=80
o
C
A
-Ic
-Ic pulse
V
-
-
2.10
2.30
2.25
Tj
Tstg
W
Collector-Emitter voltage
mA
nA
Units
200
600
400
1040
+150
200
4. Electrical characteristics ( at Tj= 25
o
C unless otherwise specified )
Tj=125
o
C
Tj=25
o
C
Tj=125
o
C
VCE(sat)
(chip)
VCE(sat)
(terminal)
Tj=25
o
C
Conditions
Collector Power Dissipation
Junction temperature
1 device
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Pc
N m
(*1) All terminals should be connected together when isolation test will be done.
o
C
Viso
400
1ms
1200
±20
Symbols
Conditions
Icp
1ms
3. Absolute Maximum Ratings ( at Tc= 25
o
C unless otherwise specified )
Maximum
Ratings
-40 to +125
VGES
Units
300
VCES
IGES
Items
ICES
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Turn-off time
Forward on voltage
between terminal and copper base (*1)
-
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2MBI200U4B-120-50 | 制造商:Fuji Electric 功能描述:IGBT DUAL MODULE 200A 1200V |
| 2MBI200U4D-120 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:IGBT MODULE |
| 2MBI200U4H-120 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:IGBT MODULE |
| 2MBI200U4H-120-50 | 制造商:Fuji Electric 功能描述:IGBT 2 PACK MOD 1200V 200A M234 制造商:Fuji Electric 功能描述:IGBT, 2 PACK MOD, 1200V, 200A, M234 制造商:Fuji Electric 功能描述:IGBT, 2 PACK MOD, 1200V, 200A, M234; Transistor Type:IGBT Module; DC Collector Current:200A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:1.04kW; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes |
| 2MBI200U4H-170 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:IGBT MODULE |
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