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参数资料
| 型号： | 2MBI300U4N-170-50 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 450 A, 1700 V, N-CHANNEL IGBT |
| 封装： | MODULE-11 |
| 文件页数： | 3/6页 |
| 文件大小： | 579K |
| 代理商： | 2MBI300U4N-170-50 |
33
IGBT Modules
2MBI300U4N-170-50
Reverse bias safe operating area (max.)
Switching loss vs. Gate resistance (typ.)
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=1.5Ω, Tj=125°C
Switching time vs. Gate resistance (typ.)
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=1.5Ω, Tj= 25°C
Vcc=900V, Ic=300A, VGE=±15V, Tj= 25°C
Stray inductance <= 100nH
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=1.5Ω
Vcc=900V, Ic=300A, VGE=±15V, Tj= 125°C
+VGE=15V,-VGE <= 15V, RG >= 1.5Ω ,Tj <= 125°C
10
100
1000
10000
0
100
200
300
400
500
600
Collector current : Ic [A]
S
w
itc
hi
ng
tim
e
:
to
n,
tr,
to
ff,
tf
[n
se
c
]
ton
toff
tr
tf
10
100
1000
10000
0
100
200
300
400
500
600
Collector current : Ic [A]
S
w
itc
hi
ng
tim
e
:
to
n,
tr,
to
ff,
tf
[n
se
c
]
ton
tr
tf
toff
10
100
1000
10000
0.1
1.0
10.0
100.0
Gate resistance : RG [Ω]
S
w
itc
hi
ng
tim
e
:
to
n,
tr,
to
ff,
tf
[n
se
c
]
tr
tf
ton
toff
0
25
50
75
100
125
150
0
100
200
300
400
500
600
Collector current : Ic [A]
S
w
itc
hi
ng
lo
ss
:
E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e]
Eon(125°C)
Eon(25°C)
Eoff(125°C)
Err(125°C)
Err(25°C)
Eoff(25°C)
0
50
100
150
200
250
300
0.1
1.0
10.0
100.0
Gate resistance : RG [Ω]
S
w
itc
hi
ng
lo
ss
:
E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e]
Eoff
Err
Eon
0
200
400
600
800
0
500
1000
1500
Collector-Emitter voltage : VCE [V]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
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