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参数资料
| 型号： | 2MBI600VN-120-50 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-11 |
| 文件页数： | 2/3页 |
| 文件大小： | 596K |
| 代理商： | 2MBI600VN-120-50 |
2
2MBI600VN-120-50
2
IGBT Modules
Characteristics (Representative)
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
Vge= 0V, = 1MHz, Tj= 25°C
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=600A, Tj= 25°C
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Vge= 15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
1
10
100
1000
Collector-Emitter voltage: Vce [V]
G
at
e
C
ap
ac
ita
nc
e:
C
ie
s,
C
oe
s,
C
re
s
[n
F]
**
*
Cies
Cres
Coes
0
200
400
600
800
1000
1200
1400
0
1
2
3
4
5
Collector-Emitter voltage: Vce [V]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
Vge=20V 15V
12V
10V
8V
0
200
400
600
800
1000
1200
1400
0
1
2
3
4
5
Collector-Emitter voltage: Vce [V]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
Vge= 20V
12V
15V
10V
8V
0
200
400
600
800
1000
1200
1400
0
1
2
3
4
5
Collector-Emitter Voltage: Vce [V]
C
ol
le
ct
or
C
ur
re
nt
:I
c
[A
]
Tj=25°C 125°C
150°C
0
2
4
6
8
10
5
10
15
20
25
Gate-Emitter Voltage: Vge [V]
C
ol
le
ct
or
-E
m
itt
er
V
ol
ta
ge
:V
ce
[V
]
Ic=1200A
Ic=600A
Ic=300A
0
1000 2000 3000 4000 5000 6000
Gate charge: Qg [nC]
C
ol
le
ct
or
-E
m
itt
er
vo
lta
ge
:V
ce
[2
00
V
/d
iv
]
G
at
e-
E
m
itt
er
vo
lta
ge
:
V
ge
[5
V
/d
iv
]
Vce
Vge
0
5
10
15
20
25
30
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2MBI600VXA-120E-50 | 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 600A/1200V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 600A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:800A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:3.35kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module;;RoHS Compliant: Yes |
| 2MBI650VXA-170E-50 | 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 650A/1700V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 650A/1700V, Transistor Polarity:Dual N Channel, DC Collector Current:900A, Collector Emitter Voltage Vces:2.1V, Power Dissipation Pd:4.15kW, Collector Emitter Voltage V(br)ceo:1.7kV, Transistor Case Style:Module, , RoHS Compliant: Yes 制造商:Fuji Electric 功能描述:IGBT Module Dual 650A 1700V Cu 172x89mm |
| 2MBI75-060 | 制造商:Fuji Electric 功能描述: |
| 2MBI75-120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 75A I(C) |
| 2MBI75F-060 | 制造商:Fuji Electric 功能描述: |
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