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2N1116 Availability
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2N1116 Information
Category Transistors
Class Transistors; Bipolar; Si NPN Low-Power
Type Bipolar; Si NPN Low-Power
2N1116 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 60
V(BR)CBO (V) : 60
I(C) Max. (A) : 800m
Absolute Max. Power Diss. (W) : 600m
Maximum Operating Temp (шC) : 200ю
I(CBO) Max. (A) : 15u
@V(CBO) (V) (Test Condition) : 60
V(CE)sat Max. (V) : 5.0
@I(C) (A) (Test Condition) : 500m
@I(B) (A) (Test Condition) : 50m
h(FE) Min. Current gain. : 40
h(FE) Max. Current gain. : 150
@I(C) (A) (Test Condition) : 500m
@V(CE) (V) (Test Condition) : 6.0
f(T) Min. (Hz) Transition Freq :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) : 100p
@V(CB) (V) (Test Condition) : 20
@Freq. (Hz) (Test Condition) : 1.0M
Package Style : TO-5
Mounting Style : T
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2N1116 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio...
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N1116
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11/7/2009 1:43 AM