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参数资料
| 型号： | 2N1132 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 263K |
| 代理商： | 2N1132 |
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2N1132 Information
Category Transistors
Class Transistors; Bipolar; Si PNP Low-Power
Type Bipolar; Si PNP Low-Power
2N1132 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 35
V(BR)CBO (V) : 50
I(C) Max. (A) : 600m
Absolute Max. Power Diss. (W) : 600m
Maximum Operating Temp (шC) : 175х
I(CBO) Max. (A) : 100u
@V(CBO) (V) (Test Condition) : 50
V(CE)sat Max. (V) : 1.5
@I(C) (A) (Test Condition) : 150m
@I(B) (A) (Test Condition) : 15m
h(FE) Min. Current gain. : 30
h(FE) Max. Current gain. : 90
@I(C) (A) (Test Condition) : 150m
@V(CE) (V) (Test Condition) : 10
f(T) Min. (Hz) Transition Freq :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) : 45p
@V(CB) (V) (Test Condition) : 10
@Freq. (Hz) (Test Condition) : 140k
Package Style : TO-39
Mounting Style : T
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2N1132 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio...
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N1132
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11/7/2009 1:43 AM
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N1132A | 制造商:. 功能描述: 制造商:. 功能描述:600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 制造商:Crp 功能描述:600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 制造商:Motorola Inc 功能描述:600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 制造商:TE Connectivity 功能描述:600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N1132B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Small Signal Transistors |
| 2N1132CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:HIGH SPEED MEDIUM POWER |
| 2N1132DCSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed |
| 2N1132J | 制造商:RAYTHEON 制造商全称:RAYTHEON 功能描述:Medium Current General Purpose Amplifiers and Switches |
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