- 您现在的位置：买卖IC网 > PDF目录30403 > 2N1132CSM-JQR-B (SEMELAB LTD) 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2N1132CSM-JQR-B |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LCC1-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 41K |
| 代理商： | 2N1132CSM-JQR-B |
2N1132CSM
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7518, ISSUE 1
ELECTRICAL CHARACTERISTICS (T
Amb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max.
Unit
V(BR)CBO*
Collector-Base Breakdown Voltage
IC = 10A
IE = 0
50
V(BR)CEO*
Collector-Emitter Breakdown Voltage
IC = 10mA
IB = 0
40
V
IE = 0
VCB = 50V
10
VCB = 30V
1
ICBO
Collector to Base Cut-Off Current
IE = 0
Tamb =150°C
100
IEBO
Emitter to Base Cut-Off Current
IC = 0
VEB = 5V
100
A
ICER
Collector to Emitter Cut-Off Current
RBE <= 10
VCE = 50V
10
mA
IC = 150mA
30
100
hFE*
DC Current Gain
VCE = 10V
IC = 5mA
25
VCE(SAT)*
Collector To Emitter Saturation Voltage
1.3
VBE(SAT)*
Base To Emitter Saturation Voltage
IC = 150mA
IB = 15mA
1.5
V
DYNAMIC CHARACTERISTICS
VCB = 10V
IE = 0
COBO
Output Capacitance
f = 1.0MHz
45
VEB = 0.5V
IC = 0
CIBO
Input Capacitance
f = 1.0MHz
80
pF
IC = 50mA
VCE = 10V
| hfe |
Small Signal Current Gain
f = 20MHz
3.0
20
td
Delay Time
15
tr
Rise Time
25
ts
Storage Time
80
tf
Fall Time
VCC = 30V
IC = 150mA
IB1 - IB2 = 15mA
25
nS
* Pulse test tp = 300s, δ < 2%
THERMAL CHARACTERISTICS
Max.
Unit
Rth j-Amb
Thermal resistance to ambient
375
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| 2N1132 | 600 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N3219 | 100 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-46 |
| 2N1026 | 100 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N722 | 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N1136B | 6 A, 80 V, PNP, Ge, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N1132DCSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Dual Bipolar PNP Devices in a hermetically sealed |
| 2N1132J | 制造商:RAYTHEON 制造商全称:RAYTHEON 功能描述:Medium Current General Purpose Amplifiers and Switches |
| 2N1132JAN | 制造商:CRP 功能描述:2N1132 CRP'76 N15C8B |
| 2N1132L | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 2N1136 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3 |
发布紧急采购，3分钟左右您将得到回复。