参数资料
型号: 2N1136B
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 6 A, 80 V, PNP, Ge, POWER TRANSISTOR, TO-3
封装: TO-3, 2 PIN
文件页数: 1/1页
文件大小: 239K
代理商: 2N1136B
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2N1136B Availability
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2N1136B Information
Category Transistors
2N1136B Specifications
Military/High-Rel : N
V(BR)CEO (V) : 80
V(BR)CBO (V) : 100
I(C) Max. (A) : 6.0
Absolute Max. Power Diss. (W) :
Maxim um Operating Tem p (шC) : 100х
I(CBO) Max. (A) : 5.0m
@V(CBO) (V) (Test Condition) : 60
V(CE)sat Max. (V) : 1.0
@I(C) (A) (Test Condition) : 3.0
@I(B) (A) (Test Condition) : 300m
h(FE) Min. Current gain. : 50
h(FE) Max. Current gain. : 100
@I(C) (A) (Test Condition) : 3.0
@V(CE) (V) (Test Condition) : 5.0
f(T) Min. (Hz) Transition Freq :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(r) Max. (s) Rise tim e :
t(f) Max. (s) Fall tim e. :
Package Style : TO-3
Mounting Style : T
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2N1136B 6 A, 80 V, PNP, Ge, POWER TRANSISTOR, TO-3
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