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参数资料
| 型号： | 2N1225 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10 mA, 40 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-12 |
| 封装： | TO-12, 4 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 239K |
| 代理商： | 2N1225 |
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2N1225 Availability
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2N1225 Information
Category Transistors
2N1225 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 40г
V(BR)CBO (V) : 40
I(C) Max. (A) : 10m
Absolute Max. Power Diss. (W) : 120m
Maxim um Operating Tem p (шC) : 100х
I(CBO) Max. (A) : 12u
@V(CBO) (V) (Test Condition) : 12
h(FE) Min. Current gain. : 20
h(FE) Max. Current gain. : 175
@I(C) (A) (Test Condition) : 1.5m
@V(CE) (V) (Test Condition) : 12
h(fe) Min. SS Current gain. : 20
@I(C) (A) (Test Condition) : 1.5m
@V(CE) (V) (Test Condition) : 12
@Freq. (Hz) (Test Condition) : 1.0k
f(T) Min. (Hz) Transition Freq : 100M
@I(C) (A) (Test Condition) : 1.5m
@V(CE) (V) (Test Condition) : 12
C(obo) (Max) (F) : 3.0p
@V(CB) (V) (Test Condition) : 12
@Freq. (Hz) (Test Condition) : 140k
Package Style : TO-12
Mounting Style : T
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相关代理商/技术参数 |
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|---|---|
| 2N1225J | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N1225JAN | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 2N1227 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 3A I(C) | TO-3 |
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