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参数资料
| 型号： | 2N1307 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 237K |
| 代理商： | 2N1307 |
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2N1307 Information
Category Transistors
2N1307 Specifications
Military/High-Rel : N
V(BR)CEO (V) :
V(BR)CBO (V) : 30
I(C) Max. (A) : 300m
Absolute Max. Power Diss. (W) : 150m
Maxim um Operating Tem p (шC) : 85х
I(CBO) Max. (A) : 6.0uШ
@V(CBO) (V) (Test Condition) : 25
h(FE) Min. Current gain. : 60
h(FE) Max. Current gain. : 300
@I(C) (A) (Test Condition) : 10m
@V(CE) (V) (Test Condition) : 1.0
h(fe) Min. SS Current gain. :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
f(T) Min. (Hz) Transition Freq : 10M
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : 5.0
C(obo) (Max) (F) : 20p
@V(CB) (V) (Test Condition) : 5.0
@Freq. (Hz) (Test Condition) : 1.0M
Package Style : TO-5
Mounting Style : T
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