参数资料
型号: 2N1319
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: 400 mA, 20 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5
封装: TO-5, 3 PIN
文件页数: 1/1页
文件大小: 239K
代理商: 2N1319
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2N1319 Availability
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2N1319 Information
Category Transistors
2N1319 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 20
V(BR)CBO (V) : 20
I(C) Max. (A) : 400m
Absolute Max. Power Diss. (W) : 120m
Maxim um Operating Tem p (шC) : 71х
I(CBO) Max. (A) : 6.0u
@V(CBO) (V) (Test Condition) : 12
h(FE) Min. Current gain. : 15
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 400m
@V(CE) (V) (Test Condition) : 300m
h(fe) Min. SS Current gain. :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
f(T) Min. (Hz) Transition Freq : 3.0M
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : 6.0
C(obo) (Max) (F) : 30p
@V(CB) (V) (Test Condition) : 6.0
@Freq. (Hz) (Test Condition) :
Package Style : TO-5
Mounting Style : T
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