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参数资料
| 型号： | 2N1487 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | BIP General Purpose Power |
| 英文描述： | 6 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 文件页数： | 1/2页 |
| 文件大小： | 28K |
| 代理商： | 2N1487 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: B
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N1487
2N1498
2N1488
2N1490
Units
Collector-Emitter Voltage
VCEO
40
55
Vdc
Collector-Base Voltage
VCBO
60
100
Vdc
Collector-Emitter Voltage
VCEX
60
100
Vdc
Emitter-Base Voltage
VEBO
10
Vdc
Base Current
IB
3.0
Adc
Collector Current
IC
6.0
Adc
Total Power Dissipation @ TC = 25
0C (1)
PT
75
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
2.33
0C/W
1) Derate linearly 0.429 W/
0C for TC > 250C
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CEO
40
55
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 Adc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CBO
60
100
Vdc
Collector-Emitter Breakdown Voltage
IC = 0.5 mAdc, VEB = 1.5 Vdc
2N1487, 2N1489
2N1488, 2N1490
V(BR)CEX
60
100
Vdc
Collector-Base Cutoff Current
VCB = 30 Vdc
ICBO
25
Adc
Emitter-Base Cutoff Current
VEB = 10 Vdc
IEBO
25
Adc
TECHNICAL DATA
2N1487 JAN, JTX, JTXV
2N1488 JAN, JTX, JTXV
2N1489 JAN, JTX, JTXV
2N1490 JAN, JTX, JTXV
Processed per MIL-PRF-19500/208
NPN HIGH-POWER SILICON TRANSISTOR
TO-33 (TO-204AA)
MIL-PRF
QPL
DEVICES
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N1488 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 55V 6A 3PIN TO-204AA - Bulk |
| 2N1489 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 6A 3PIN TO-204AA - Bulk |
| 2N1490 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 55V 6A 3PIN TO-204AA - Bulk |
| 2N1490J | 制造商:RCA 功能描述: |
| 2N1490JAN | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 3-Pin(2+Tab) TO-3 |
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