- 您现在的位置：买卖IC网 > PDF目录49812 > 2N1724 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61 PDF资料下载
参数资料
| 型号： | 2N1724 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61 |
| 文件页数： | 1/2页 |
| 文件大小： | 31K |
| 代理商： | 2N1724 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: F
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N1722 / 2N1724
Units
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
175
Vdc
Emitter-Base Voltage
VEBO
10
Vdc
Collector Current
IC
5.0
Adc
Total Power Dissipation @ TA = 25
0C(1)
@ TC = 100
0C (2)
PT
3.0
50
W
Temperature Range:
Operating
Storage Junction
TOP,
Tstg
175
-65 to +200
0C
1) Derate linearly 20 mW/
0C for TA between +250C and +1750C
2) Derate linearly 666 mW/
0C for TC between +1000C and +1750C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
V(BR)CEO
80
Vdc
Emitter-Base Breakdown Voltage
IE = 10 mAdc
V(BR)EBO
10
Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
ICES
300
Adc
Collector-Base Cutoff Current
VCB = 175 Vdc
ICBO
5.0
mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
400
Adc
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 2.0 Adc, VCE = 15 Vdc
IC = 5.0 Adc, VCE = 15 Vdc
IC = 100 mAdc, VCE = 15 Vdc
hFE
30
15
30
120
TECHNICAL DATA
2N1724
TO-61
2N1722 JAN, JTX
2N1724 JAN, JTX
Processed per MIL-PRF-19500/262
NPN SILICON HIGH-POWER TRANSISTOR
2N1722
TO-53
MIL-PRF
QPL
DEVICES
相关PDF资料 |
PDF描述 |
|---|---|
| 2N1742 | Ge, PNP, RF SMALL SIGNAL TRANSISTOR, TO-9 |
| 2N1753 | 50 mA, 18 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-1 |
| 2N1867 | 50 mA, 35 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-9 |
| 2N1889 | 250 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N1890 | 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N1724A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 5A 3PIN TO-61 - Bulk |
| 2N1725 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 5A 3PIN TO-61 - Bulk |
| 2N1726 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-9 |
| 2N1729 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 300MA I(C) | TO-5 |
| 2N173 | 制造商:Motorola Inc 功能描述: 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, PNP Type, TO-36 |
发布紧急采购，3分钟左右您将得到回复。