参数资料
型号: 2N2219A
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
封装: TO-39, 3 PIN
文件页数: 5/7页
文件大小: 378K
代理商: 2N2219A
Data Sheet PU10338EJ01V0DS
3
2SC4536
TYPICAL CHARACTERISTICS (TA = +25
°°°°C)
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
100
20
40
60
0
10
20
IB = 0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
VCE = 10 V
IC = 50 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAXIMUM
POWER GAIN, MAG vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Power
Gain
G
max
(u)
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
20
10
0
0.1
0.2
0.3
0.5
1
2
3
MAG
Gmax (u)
|S21e|
2
f = 1 MHz
IE = 0 mA
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5
2
0.2
1
0.5
1
5
10
30
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
5
0.2
0.5
1
100
300
10
550
30
VCE = 10 V
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
100
50
30
10
100
0.1
1
10
1 000
500
400
1 000
1 500
2 000
2 500
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
Ceramic Substrate
16 cm2
× 0.7 mm (t)
Rth (j-a) 62.5C/W
Free Air
Rth (j-a) 312.5C/W
相关PDF资料
PDF描述
2N2219 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N2270 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N2243A 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N2243 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N2237 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
相关代理商/技术参数
参数描述
2N2219A 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5
2N2219A_03 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED SWITCHES
2N2219A_11 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:SMALL SIGNAL BIPOLAR NPN SILICON
2N2219A-B 功能描述:两极晶体管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N2219A-BP 功能描述:两极晶体管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2