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参数资料
| 型号： | 2N2219A |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封装： | METAL PACKAGE-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 168K |
| 代理商： | 2N2219A |
THERMAL DATA
TO-39
TO-18
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
50
187.5
83.3
300
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 60 V
Tj = 150
oC
10
nA
A
ICEX
Collector Cut-off
Current (VBE = -3V)
VCE = 60 V
10
nA
IBEX
Base Cut-off Current
(VBE = -3V)
VCE = 60 V
20
nA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 3 V
10
nA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10
A
75
V
V(BR)CEO
Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
40
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10
A
6V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
IC = 500 mA
IB = 50 mA
0.3
1
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
IC = 500 mA
IB = 50 mA
0.6
1.2
2
V
hFE
DC Current Gain
IC = 0.1 mA
VCE = 10 V
IC = 1 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 500 mA
VCE = 10 V
IC = 150 mA
VCE = 1 V
IC = 10 mA
VCE = 10 V
Tamb = -55
oC
35
50
75
100
40
50
35
300
hfe
Small Signal Current
Gain
IC = 1 mA
VCE = 10 V
f = 1KHz
IC = 10 mA
VCE = 10 V
f = 1KHz
50
75
300
375
fT
Transition Frequency
IC = 20 mA
VCE = 20 V
f = 100 MHz
300
MHz
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
f = 100KHz
25
pF
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 100 KHz
8
pF
Re(hie)
Real Part of Input
Impedance
IC = 20 mA
VCE = 20 V
f = 300MHz
60
* Pulsed: Pulse duration = 300
s, duty cycle ≤ 1 %
2N2219A / 2N2222A
2/7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N2219A | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
| 2N2219A_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:HIGH SPEED SWITCHES |
| 2N2219A_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:SMALL SIGNAL BIPOLAR NPN SILICON |
| 2N2219A-B | 功能描述:两极晶体管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N2219A-BP | 功能描述:两极晶体管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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