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参数资料
| 型号： | 2N2219ALJS |
| 厂商： | SEMICOA CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | HERMETIC SEALED, METAL CAN-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 457K |
| 代理商： | 2N2219ALJS |
Rev. K
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N2219AL
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N2219ALJ)
JANTX level (2N2219ALJX)
JANTXV level (2N2219ALJV)
JANS level (2N2219ALJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
NPN silicon transistor
Features
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/251
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
50
Volts
Collector-Base Voltage
VCBO
75
Volts
Emitter-Base Voltage
VEBO
6
Volts
Collector Current, Continuous
IC
800
mA
Power Dissipation, TA = 25
OC
Derate linearly above 25OC
PT
0.8
4.6
W
mW/
°C
Power Dissipation, TC = 25
OC
Derate linearly above 25OC
PT
3.0
17.0
W
mW/
°C
Operating Junction Temperature
TJ
-55 to +200
°C
Storage Temperature
TSTG
-55 to +200
°C
Semicoa Corporation
Copyright
2010
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相关代理商/技术参数 |
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|---|---|
| 2N2219A-O-B | 制造商:Semelab (TT electronics) 功能描述:2N2219A-O-B |
| 2N2219L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN Transistor |
| 2N222 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Amplifier Transistors |
| 2N2220 | 制造商:ELCIND 功能描述: |
| 2N2220A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-18 |
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