参数资料
型号: 2N2539
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: 800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
封装: TO-18, 3 PIN
文件页数: 1/1页
文件大小: 238K
代理商: 2N2539
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2N2539 Availability
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2N2539 Information
Category Transistors
2N2539 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 30
V(BR)CBO (V) : 60
I(C) Max. (A) : 800m
Absolute Max. Power Diss. (W) : 500m
Maxim um Operating Tem p (шC) : 200х
I(CBO) Max. (A) : 250n
@V(CBO) (V) (Test Condition) : 40
h(FE) Min. Current gain. : 50
h(FE) Max. Current gain. : 150
@I(C) (A) (Test Condition) : 150m
@V(CE) (V) (Test Condition) : 10
f(T) Min. (Hz) Transition Freq : 250M
@I(C) (A) (Test Condition) : 20m
@V(CE) (V) (Test Condition) : 20
V(CE)sat Max. (V) : 1.6
@I(C) (A) (Test Condition) : 500m
@I(B) (A) (Test Condition) : 50m
h(fe) Min. SS Current gain. : 2.5
@I(C) (A) (Test Condition) : 20m
@V(CE) (V) (Test Condition) : 20
@Freq. (Hz) (Test Condition) : 100M
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. : 40n
t(s) Max. (s) Storage tim e. : 20n
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e : 40n
Package Style : TO-18
Mounting Style : T
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