参数资料
型号: 2N2604A
厂商: SEMICOA CORP
元件分类: 小信号晶体管
英文描述: 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
封装: HERMETIC SEALED, METAL CAN-3
文件页数: 1/2页
文件大小: 199K
代理商: 2N2604A
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. H
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N2904A
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N2904AJ)
JANTX level (2N2904AJX)
JANTXV level (2N2904AJV)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
PNP silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 0600
Reference document:
MIL-PRF-19500/290
Benefits
Qualification Levels: JAN, JANTX, and
JANTXV
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
60
Volts
Collector-Base Voltage
VCBO
60
Volts
Emitter-Base Voltage
VEBO
5
Volts
Collector Current, Continuous
IC
600
mA
Power Dissipation, TA = 25 °C
Derate above 60
°C
PT
0.8
5.7
W
mW/
°C
Power Dissipation, TC = 25 °C
Derate above 25
°C
PT
3.0
17.2
W
mW/
°C
Thermal Resistance
RθJA
175
°C/W
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
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