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参数资料
| 型号： | 2N2894DCSM-JQR |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 12 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | HERMETIC SEALED, CERAMIC, LCC2-6 |
| 文件页数： | 1/2页 |
| 文件大小： | 18K |
| 代理商： | 2N2894DCSM-JQR |
2N2894DCSM
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
DUAL HIGH SPEED, MEDIUM POWER, PNP
GENERAL PURPOSE TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FEATURES
SILICON PLANAR EPITAXIAL DUAL PNP
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
SCREENING OPTIONS AVAILABLE
HIGH SPEED, LOW SATURATION SWITCH
APPLICATIONS:
Hermetically sealed dual surface mount ver-
sion of the popular 2N2894 for high reliability
applications requiring small size and low
weight devices.
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VEBO
Emitter – Base Voltage
IC
Collector Current
PD
Total Device Dissipation
@ TA =25°C
Derate above 25°C
PD
Total Device Dissipation
@ TC =25°C
Derate above 25°C
TSTG , TJ
Operating and Storage Temperature Range
-12V
-4V
200mA
360mW
2.06mW / °C
1.2W
6.85mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
LCC2 PACKAGE
Underside View
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
A
2
1
3
4
5
6
6.22 ± 0.13
(0.245 ± 0.005)
2
.54
±
0.
13
(0
.10
±
0.
005)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
1.27 ± 0.13
(0.05 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
4.
32
±
0.
13
(0
.170
±
0.
005)
0
.64
±
0.
08
(0
.025
±
0.
003)
0.23
(0.009)
rad.
A =
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 4079
Issue 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N2894L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 200MA I(C) | TO-18 |
| 2N2895 | 制造商:motorola 功能描述:DIODE 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 18 NPN Silicon Transistor |
| 2N2896 | 功能描述:两极晶体管 - BJT NPN Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N2897 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 18 NPN Silicon Transistor |
| 2N2898 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 1A I(C) | TO-46 |
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