- 您现在的位置：买卖IC网 > PDF目录41415 > 2N2896X (SEMELAB LTD) 1000 mA, 90 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA PDF资料下载
参数资料
| 型号： | 2N2896X |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 90 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 封装： | HERMETIC SEALED, METAL, TO-18, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 225K |
| 代理商： | 2N2896X |
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 7584
Issue 2
Page 1 of 3
2N2896X
High Voltage
Hermetic TO-18 Metal package.
Ideally suited for General Purpose
Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
140V
VCEO
Collector – Emitter Voltage
90V
VCER
Collector – Emitter Voltage
140V
VEBO
Emitter – Base Voltage
7V
IC
Continuous Collector Current
1.0A
PD
Total Power Dissipation at
TA = 25°C
500mW
Derate Above 25°C
2.86mW/°C
PD
Total Power Dissipation at
TC = 25°C
1.8W
Derate Above 25°C
10.3mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJA
Thermal Resistance, Junction To Ambient
350
°C/W
RθJC
Thermal Resistance, Junction To Case
97
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| 2N2904ALE4 | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AA |
| 2N2904AL | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AA |
| 2N2907AC1A-JQRS.GCDM | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2907AC1A.DA | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2907AC1A-JQRS.RAD | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N2897 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 18 NPN Silicon Transistor |
| 2N2898 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 1A I(C) | TO-46 |
| 2N2899 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 1A I(C) | TO-46 |
| 2N2900 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | TO-46 |
| 2N2901 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN MULTI-CHIP COMPOSITE TRANSISTOR PAIR |
发布紧急采购，3分钟左右您将得到回复。