参数资料
型号: 2N2906U
元件分类: 小信号晶体管
英文描述: 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: US6, 6 PIN
文件页数: 2/4页
文件大小: 52K
代理商: 2N2906U
2008. 9. 23
2/4
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICEX
VCE=-30V, VEB=-3V
-
-50
nA
Base Cut-off Current
IBL
VCE=-30V, VEB=-3V
-
-50
nA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-10 A, IE=0
-40
-
V
Collector-Emitter Breakdown Voltage *
V(BR)CEO
IC=-1mA, IB=0
-40
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10 A, IC=0
-5.0
-
V
DC Current Gain
*
hFE(1)
VCE=-1V, IC=-0.1mA
60
-
hFE(2)
VCE=-1V, IC=-1mA
80
-
hFE(3)
VCE=-1V, IC=-10mA
100
-
300
hFE(4)
VCE=-1V, IC=-50mA
60
-
hFE(5)
VCE=-1V, IC=-100mA
30
-
Collector-Emitter Saturation Voltage
*
VCE(sat)1
IC=-10mA, IB=-1mA
-
-0.25
V
VCE(sat)2
IC=-50mA, IB=-5mA
-
-0.4
Base-Emitter Saturation Voltage
*
VBE(sat)1
IC=-10mA, IB=-1mA
-0.65
-
-0.85
V
VBE(sat)2
IC=-50mA, IB=-5mA
-
-0.95
Transition Frequency
fT
VCE=-20V, IC=-10mA, f=100MHz
250
-
MHz
Collector Output Capacitance
Cob
VCB=-5V, IE=0, f=1MHz
-
4.5
pF
Input Capacitance
Cib
VBE=-0.5V, IC=0, f=1MHz
-
10
pF
Input Impedance
hie
VCE=-10V, IC=-1mA, f=1kHz
2.0
-
12
k
Voltage Feedback Ratio
hre
1.0
-
10
x10
-4
Small-Signal Current Gain
hfe
100
-
400
Collector Output Admittance
hoe
3.0
-
60
Noise Figure
NF
VCE=-5V, IC=-0.1mA,
Rg=1k
, f=10Hz
15.7kHz
-
4.0
dB
Switching Time
Delay Time
td
Vout
Total 4pF
C
10k
275
V =-3.0V
CC
300ns
-10.6V
0.5V
0
t ,t < 1ns, Du=2%
r
in
V
f
-
35
nS
Rise Time
tr
-
35
Storage Time
tstg
20s
1N916
or equiv.
-10.9V
9.1V
Vout
Total 4pF
C
V =-3.0V
CC
275
10k
Vin
0
t ,t < 1ns, Du=2%
rf
-
225
Fall Time
tf
-
75
2N2906E
* Pulse Test : Pulse Width
300 S, Duty Cycle
2%.
相关PDF资料
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2N2906 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
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