- 您现在的位置：买卖IC网 > PDF目录31610 > 2N2907AB (MICROSEMI CORP-LOWELL) 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2N2907AB |
| 厂商： | MICROSEMI CORP-LOWELL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/2页 |
| 文件大小： | 44K |
| 代理商： | 2N2907AB |
1
2N2907ADIE
A Microsemi Company
580 Pleasant St.
Phone: 617-924-9280
Watertown, MA 02172
Fax:
617-924-1235
DIE SPECIFICATION
SWITCHING TRANSISTOR
PNP SILICON
FEATURES:
n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291
n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS
n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
n LOW VCE(sat): .4V @ IC = 150 mAdc
Absolute Maximum Ratings:
Symbol
Parameter
Limit
Unit
Vceo
Collector-Emitter Voltage
60
Vdc
Vcbo
Collector-Base Voltage
60
Vdc
Vebo
Emitter-Base Voltage
5.0
Vdc
Ic
Collector Current- Continuous
600
mAdc
Tj, Tstg
Operating Junction & Storage
-65 to +200 °C
Temperature Range
Sertech reserves the right to make changes to any product design, specification, or other information at any time without
prior notice.
Data Sheet, Die, 2N2907A MSW Rev. - 4/14/98
PHYSICAL DIMENSIONS
Packaging Options:
W: Wafer (100% probed)
U: Wafer (sample probed)
D:
Chip (Waffle Pack)
B: Chip (Vial)
V:
Chip (Waffle Pack, 100% visually inspected) X: Other
Processing Options:
Standard: Capable of JANTXV applications (No Suffix)
Suffix C:
Commercial
Suffix S:
Capable of S-Level equivalent applications
Metallization Options:
Standard: Al Top
/ Au Backside (No Dash #)
Dash 1:
Al Top
/
TiPdAg Backside
ORDERING INFORMATION:
PART #: 2N2907A_ _ - _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #:
Metallization Option
MSC0948.PDF
相关PDF资料 |
PDF描述 |
|---|---|
| 2N2907ABS | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2907AD-1 | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2907AUS | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2907AVC-1 | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2907AVS-1 | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N2907A-BP | 功能描述:两极晶体管 - BJT PNP Swt Trans 400mW, 60V, 600mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N2907AC1 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N2907AC3 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N2907ACECC | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed TO18 |
| 2N2907ACSM | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTORHIRELPNP60V0.6ALCC1 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR,HIREL,PNP,60V,0.6A,LCC1 制造商:SEMELAB 功能描述:TRANSISTOR,HIREL,PNP,60V,0.6A,LCC1; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Power Dissipation Pd:500mW; DC Collector Current:-600mA; DC Current Gain hFE:100; Operating Temperature Min:-65C; No. of Pins:3 ;RoHS Compliant: Yes |
发布紧急采购，3分钟左右您将得到回复。