- 您现在的位置：买卖IC网 > PDF目录31610 > 2N2907AD-1 (MICROSEMI CORP-LOWELL) 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2N2907AD-1 |
| 厂商： | MICROSEMI CORP-LOWELL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/2页 |
| 文件大小： | 44K |
| 代理商： | 2N2907AD-1 |
2
Electrical Characteristics @ Tj = 25
°C
Symbol
Parameter
Conditions
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)CBO
Breakdown Voltage, Collector to Base
Bias Cond. D, IC=10uAdc
60
Vdc
V(BR)EBO
Breakdown Voltage, Emitter to Base
Bias Cond. D, IE=10uAdc
5
Vdc
V(BR)CEO
Breakdown Voltage, Collector to Emitter
Bias Cond. D, IC= 10mAdc, pulsed
60
Vdc
ICES
Collector to Emitter Cutoff Current
Bias Cond. D, VCE=50Vdc
50 nAdc
ICBO1
Collector to Base Cutoff Current
Bias Cond. D, VCB=50Vdc
10 nAdc
IEBO
Emitter to Base Cutoff Current
Bias Cond. D, VEB= 4Vdc
50 nAdc
ON CHARACTERISTICS
hFE1
Forward-Current Transfer Ratio
VCE=10Vdc, IC=0.1mAdc
75
hFE2
Forward-Current Transfer Ratio
VCE=10Vdc, IC=1.0mAdc
100
450
hFE3
Forward-Current Transfer Ratio
VCE=10Vdc, IC=10mAdc
100
hFE4
Forward-Current Transfer Ratio
VCE=10Vdc, IC=150mAdc, pulsed
100
300
hFE5
Forward-Current Transfer Ratio
VCE=10Vdc, IC=500mAdc, pulsed
50
VCE(sat)1
Collector to Emitter Saturation Voltage
IC=150mAdc, IB=15mAdc, pulsed
0.4 Vdc
VCE(sat)2
Collector to Emitter Saturation Voltage
IC=500mAdc, IB=50mAdc, pulsed
1.6 Vdc
VBE(sat)1
Base to Emitter Saturation Voltage
IC=150mAdc, IB=15mAdc, pulsed
0.6
1.3 Vdc
VBE(sat)2
Base to Emitter Saturation Voltage
IC=500mAdc, IB=50mAdc, pulsed
2.6 Vdc
SMALL SIGNAL CHARACTERISTICS
hfe
Short Circuit Forward Current Xfer Ratio
VCE= 10Vdc,IC =1mAdc, f= 1kHz
100
/hfe/
Magnitude of Short Circuit Forward
VCE= 20Vdc,IC =50mAdc, f=100MHz
2
Current Transfer Ratio
Cobo
Output Capacitance
VCB= 10Vdc, IE =0, 100kHz< f <1MHz
8 pF
Cibo
Input Capacitance
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz
30 pF
SWITCHING CHARACTERISTICS
ton
Saturated Turn-on Time
As defined in 19500/291 Figure 7
45 nS
toff
Saturated Turn-off Time
As defined in 19500/291 Figure 8
300 nS
相关PDF资料 |
PDF描述 |
|---|---|
| 2N2907AUS | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2907AVC-1 | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2907AVS-1 | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2907AWC-1 | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N2907AUC | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N2907ADCSM | 制造商:TT Electronics/ Semelab 功能描述:TRANSHIRELDUAL PNP60V06ALCC1 |
| 2N2907ADCSM_08 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR |
| 2N2907ADIE | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:SWITCHING TRANSISTOR PNP SILICON |
| 2N2907AE3 | 制造商:Microsemi Corporation 功能描述:2N2907AE3 - Bulk |
| 2N2907AHR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Hi-Rel 60 V, 0.6 A PNP transistor |
发布紧急采购，3分钟左右您将得到回复。