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| 型号： | 2N2907AUB-TR |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CERAMIC PACKAGE-4 |
| 文件页数： | 1/6页 |
| 文件大小： | 100K |
| 代理商： | 2N2907AUB-TR |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/291
T4-LDS-0055 Rev. 4 (100247)
Page 1 of 6
DEVICES
LEVELS
2N2906A
2N2907A
JANSM – 3K Rads (Si)
2N2906AL
2N2907AL
JANSD – 10K Rads (Si)
2N2906AUA
2N2907AUA
JANSP – 30K Rads (Si)
2N2906AUB
2N2907AUB
JANSL – 50K Rads (Si)
2N2906AUBC
2N2907AUBC
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
60
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
600
mAdc
Total Power Dissipation @ TA = +25°C
PT
(1)
0.5
W
Operating & Storage Junction Temperature Range
Top, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Ambient
RθJA
(1)
325
°C/W
1. See MIL-PRF-19500/291 for derating curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
60
Vdc
Collector-Base Cutoff Current
VCB = 60Vdc
VCB = 50Vdc
ICBO
10
μAdc
ηAdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 4.0Vdc
IEBO
10
50
μAdc
ηAdc
Collector-Emitter Cutoff Current
VCE = 50Vdc
ICES
50
ηAdc
TO-18 (TO-206AA)
2N2906A, 2N2907A
4 PIN
2N2906AUA, 2N2907AUA
3 PIN
2N2906AUB, 2N2907AUB
2N2906AUBC, 2N2907AUBC
(UBC = Ceramic Lid Version)
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PDF描述 |
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| 2N2906A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
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| 2N2906A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N2906DCSM-JQR-A | 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB |
| 2N2906DCSM | 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N2907AUBTX | 制造商:TT Electronics / OPTEK Technology 功能描述:3 PIN, SMT PNP GENERAL PURPOSE TRANSISTOR 制造商:OPTEK TECHNOLOGY INC 功能描述:3 Pin, SMT PNP general purpose transistor |
| 2N2907AUBTXV | 制造商:TT Electronics / OPTEK Technology 功能描述:3 PIN, SMT PNP GENERAL PURPOSE TRANSISTOR 制造商:OPTEK TECHNOLOGY INC 功能描述:3 Pin, SMT PNP general purpose transistor |
| 2N2907-B | 功能描述:两极晶体管 - BJT 600mA 60v RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N2907-BP | 功能描述:两极晶体管 - BJT 600mA 60v RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N2907CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
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