参数资料
型号: 2N2907AUB
厂商: SEMICOA CORP
元件分类: 小信号晶体管
英文描述: 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: HERMETIC SEALED, CERAMIC, CERSOT-3
文件页数: 1/2页
文件大小: 234K
代理商: 2N2907AUB
Copyright
2002
Semicoa Semiconductors, Inc.
Rev. K
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 1
www.SEMICOA.com
2N2907AUB
Silicon PNP Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N2907AUBJ)
JANTX level (2N2907AUBJX)
JANTXV level (2N2907AUBJV)
JANS level (2N2907AUBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
PNP silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0600
Reference document:
MIL-PRF-19500/291
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
60
Volts
Collector-Base Voltage
VCBO
60
Volts
Emitter-Base Voltage
VEBO
5
Volts
Collector Current, Continuous
IC
600
mA
Power Dissipation, TA = 25
OC
Derate linearly above 37.5 OC
PT
0.5
3.08
W
mW/
°C
Thermal Resistance
RθJA
325
°C/W
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
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相关代理商/技术参数
参数描述
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