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参数资料
| 型号： | 2N2907AWC-1 |
| 厂商： | MICROSEMI CORP-LOWELL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/2页 |
| 文件大小： | 44K |
| 代理商： | 2N2907AWC-1 |
2
Electrical Characteristics @ Tj = 25
°C
Symbol
Parameter
Conditions
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)CBO
Breakdown Voltage, Collector to Base
Bias Cond. D, IC=10uAdc
60
Vdc
V(BR)EBO
Breakdown Voltage, Emitter to Base
Bias Cond. D, IE=10uAdc
5
Vdc
V(BR)CEO
Breakdown Voltage, Collector to Emitter
Bias Cond. D, IC= 10mAdc, pulsed
60
Vdc
ICES
Collector to Emitter Cutoff Current
Bias Cond. D, VCE=50Vdc
50 nAdc
ICBO1
Collector to Base Cutoff Current
Bias Cond. D, VCB=50Vdc
10 nAdc
IEBO
Emitter to Base Cutoff Current
Bias Cond. D, VEB= 4Vdc
50 nAdc
ON CHARACTERISTICS
hFE1
Forward-Current Transfer Ratio
VCE=10Vdc, IC=0.1mAdc
75
hFE2
Forward-Current Transfer Ratio
VCE=10Vdc, IC=1.0mAdc
100
450
hFE3
Forward-Current Transfer Ratio
VCE=10Vdc, IC=10mAdc
100
hFE4
Forward-Current Transfer Ratio
VCE=10Vdc, IC=150mAdc, pulsed
100
300
hFE5
Forward-Current Transfer Ratio
VCE=10Vdc, IC=500mAdc, pulsed
50
VCE(sat)1
Collector to Emitter Saturation Voltage
IC=150mAdc, IB=15mAdc, pulsed
0.4 Vdc
VCE(sat)2
Collector to Emitter Saturation Voltage
IC=500mAdc, IB=50mAdc, pulsed
1.6 Vdc
VBE(sat)1
Base to Emitter Saturation Voltage
IC=150mAdc, IB=15mAdc, pulsed
0.6
1.3 Vdc
VBE(sat)2
Base to Emitter Saturation Voltage
IC=500mAdc, IB=50mAdc, pulsed
2.6 Vdc
SMALL SIGNAL CHARACTERISTICS
hfe
Short Circuit Forward Current Xfer Ratio
VCE= 10Vdc,IC =1mAdc, f= 1kHz
100
/hfe/
Magnitude of Short Circuit Forward
VCE= 20Vdc,IC =50mAdc, f=100MHz
2
Current Transfer Ratio
Cobo
Output Capacitance
VCB= 10Vdc, IE =0, 100kHz< f <1MHz
8 pF
Cibo
Input Capacitance
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz
30 pF
SWITCHING CHARACTERISTICS
ton
Saturated Turn-on Time
As defined in 19500/291 Figure 7
45 nS
toff
Saturated Turn-off Time
As defined in 19500/291 Figure 8
300 nS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N2907-B | 功能描述:两极晶体管 - BJT 600mA 60v RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N2907-BP | 功能描述:两极晶体管 - BJT 600mA 60v RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N2907CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
| 2N2907J.TX.V | 制造商:RAYTHEON 制造商全称:RAYTHEON 功能描述:Medium Current General Purpose Amplifiers and Switches |
| 2N2907MC | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-18 |
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