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参数资料
| 型号： | 2N3010 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 |
| 封装： | TO-18, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 237K |
| 代理商： | 2N3010 |
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2N3010 Information
Category Transistors
Type Bipolar NPN
2N3010 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 6.0
V(BR)CBO (V) : 15
I(C) Max. (A) : 50m
Absolute Max. Power Diss. (W) : 300m
Minim um Operating Tem p (шC) :
Maxim um Operating Tem p (шC) : 175х
I(CBO) Max. (A) : 10uЧ
@V(CBO) (V) (Test Condition) :
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : .40
f(T) Min. (Hz) Transition Freq : 600M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
Power Gain Min. (dB) :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Noise Figure Min. (dB) :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Sem iconductor Material :
Package Style : TO-18
Mounting Style : T
Description :
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| 2N3013 | 功能描述:两极晶体管 - BJT NPN Fast SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3014 | 功能描述:两极晶体管 - BJT NPN Fast SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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