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参数资料
| 型号： | 2N3012 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封装： | TO-18, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 237K |
| 代理商： | 2N3012 |
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2N3012 Information
Category Transistors
2N3012 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 12
V(BR)CBO (V) : 12
I(C) Max. (A) : 200m
Absolute Max. Power Diss. (W) : 1.2
Maxim um Operating Tem p (шC) : 175х
I(CBO) Max. (A) : 80nЧ
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 30
h(FE) Max. Current gain. : 120
@I(C) (A) (Test Condition) : 30n
@V(CE) (V) (Test Condition) : .50
f(T) Min. (Hz) Transition Freq :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-18
Mounting Style : T
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相关PDF资料 |
PDF描述 |
|---|---|
| 2N3012 | 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
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| 2N3019HR | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3012CSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed LCC1 |
| 2N3013 | 功能描述:两极晶体管 - BJT NPN Fast SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3014 | 功能描述:两极晶体管 - BJT NPN Fast SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3015 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N3016 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 1A 3PIN TO-5 - Bulk |
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