参数资料
型号: 2N3055A
厂商: ADVANCED SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
文件页数: 1/1页
文件大小: 24K
代理商: 2N3055A
!
CHARACTERISTICS T
C = 25
OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
BV
CEO
I
C = 200 mA
60
V
I
CEV
V
CE = 100 V
V
BE = -1.5 V
T
C = 25
OC
T
C = 150
OC
5.0
30
mA
I
CEO
V
CE = 30 V
700
A
I
EBO
V
EB = 7.0 V
5.0
mA
h
FE
V
CE = 2.0 V
I
C = 4.0 A
V
CE = 4.0 V
I
C = 4.0 A
I
C = 10 A
10
20
5.0
70
---
V
CE(SAT)
I
C = 4.0 A
I
B = 0.4 A
I
C = 10 A
I
B = 3.3 A
I
C = 15 A
I
B = 7.0 A
1.1
3.0
5.0
V
BE(ON)
V
CE = 4.0 V
I
C = 4.0 A
0.7
1.8
V
C
ob
V
CB = 10 V
f = 1.0 MHz
60
600
pF
f
t
V
CE = 4.0 V
I
C = 1.0 A
f = 1.0 MHz
0.8
6.0
MHz
I
s/b
V
CE = 60 V
t = 500 mS (NONREPETITIVE)
1.95
A
t
d
I
C = 4.0 A
I
B1 = IB2 = 0.4 A
0.5
S
t
r
I
C = 4.0 A
I
B1 = IB2 = 0.4 A
4.0
S
t
s
I
C = 4.0 A
I
B1 = IB2 = 0.4 A
3.0
S
t
f
I
C = 4.0 A
I
B1 = IB2 = 0.4 A
6.0
S
SILICON NPN POWER TRANSISTOR
2N3055A
DESCRIPTION:
The
2N3055A is Designed for
General Purpose Amplifier and
Switching Applications.
MAXIMUM RATINGS
I
C
15 A
I
B
7.0 A
V
CE
60 V
P
DISS
115 W @ T
C = 25
OC
T
J
-65
OC to +200 OC
T
STG
-65
OC to +200 OC
θθθθ
JC
1.52
OC/W
PACKAGE STYLE TO3
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2N3055ESMD 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
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