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参数资料
| 型号： | 2N3390 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-98 |
| 封装： | TO-98, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 231K |
| 代理商： | 2N3390 |
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2N3390 Information
Category Transistors
2N3390 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 25
V(BR)CBO (V) : 25
I(C) Max. (A) : 100m
Absolute Max. Power Diss. (W) : 200m
Maxim um Operating Tem p (шC) : 125ю
I(CBO) Max. (A) : 100n
@V(CBO) (V) (Test Condition) : 18
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 400
h(FE) Max. Current gain. : 800
@I(C) (A) (Test Condition) : 2.0m
@V(CE) (V) (Test Condition) : 4.5
f(T) Min. (Hz) Transition Freq :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) : 10p
@V(CB) (V) (Test Condition) : 10
@Freq. (Hz) (Test Condition) : 1.0M
Package Style : TO-98
Mounting Style : T
Description :
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3390_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| 2N3390_D75Z | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3390_Q | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3390A | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SPRINGFIELD, NEW JERSEY 07081 |
| 2N3391 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
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