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参数资料
| 型号： | 2N3416-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 69K |
| 代理商： | 2N3416-BP |
2N3416
NPN General
Purpose Amplifier
Features
Maximum Ratings*
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
50
V
VCBO
Collector-Base Voltage
50
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current, Continuous
500
mA
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
625
5.0
mW
mW/
OC
RJC
Thermal Resistance, Junction to Case
83.3
OC/W
RJA
Thermal Resistance, Junction to Ambient
200
OC/W
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
50
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10ì Adc, IE=0)
50
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10ì Adc, IC=0)
5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=25Vdc, IE=0.4Vdc)
(VCB=18Vdc, IE=0, TA=100
OC)
---
100
15
nAdc
uAdc
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
100
nAdc
* These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
Notes: 1. These ratings are based on a maximum junction temperature of 150
degrees C.
2. These are steady state limits. The factory should be consulted on
applications involving pulsed or low duty cycle operations.
This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA
TO-92
AE
B
C
D
G
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: 3
2006/05/16
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
TM
Micro Commercial Components
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
Marking: Type Number
www.mccsemi.com
1 of 3
B
CE
Pin Configuration
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3417 | 功能描述:两极晶体管 - BJT NPN 50V 500mA BULK HFE/540 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3417 APM | 功能描述:THROUGH-HOLE TRANSISTOR-SMALL SI 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:在售 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:500mA 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:300mV @ 3mA，50mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:180 @ 2mA，4.5V 功率 - 最大值:1.5W 频率 - 跃迁:- 工作温度:-65°C ~ 150°C（TJ） 安装类型:通孔 封装/外壳:TO-226-3，TO-92-3 标准主体（!--TO-226AA） 供应商器件封装:TO-92 标准包装:2,000 |
| 2N3417"D75Z | 制造商:Fairchild Semiconductor Corporation 功能描述:RF TRANSISTOR NPN 50V TO-92 |
| 2N3417 | 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor |
| 2N3417/D89Z | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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