参数资料
型号: 2N3420SMDR4
厂商: SEMELAB LTD
元件分类: 小信号晶体管
英文描述: 4000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB
封装: HERMETIC SEALED, CERAMIC, SMD1, 3 PIN
文件页数: 1/1页
文件大小: 10K
代理商: 2N3420SMDR4
3.60 (0.142)
Max.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
0.89
(0.035)
min.
4.14
(0.16
3
)
3.84
(0.15
1
)
10.69
(0.4
21)
10.39
(0.4
09)
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02
(0.6
31)
15.73
(0.6
19)
0.50 (0.020)
0.26 (0.010)
0.76
(0
.030)
min.
13
2
2N3420SMD
Bipolar NPN Device.
V
CEO =
60V
I
C = 4A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
60
V
I
C(CONT)
4
A
h
FE
@ 2/2 (V
CE / IC)
40
120
-
f
t
40M
Hz
P
D
0.9
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
15-Aug-02
Bipolar NPN Device in a
Hermetically sealed
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
PINOUTS
1 – Base
2 – Collector
3 – Emitter
SMD1 (TO276AB)
相关PDF资料
PDF描述
2N3421ASMDR4 5000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB
2N3421SMD05 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AA
2N3421SMD05R4 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AA
2N3440CSM4RG4 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2N3439CSM4RG4 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2N3421 功能描述:两极晶体管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N3421A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-39
2N3421ASMD 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed
2N3421ASMD05 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed
2N3421JAN 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393