- 您现在的位置：买卖IC网 > PDF目录55778 > 2N3442 10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 PDF资料下载
参数资料
| 型号： | 2N3442 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 封装： | TO-204AA, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 27K |
| 代理商： | 2N3442 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: C
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
VCEO
140
Vdc
Collector-Base Voltage
VCBO
160
Vdc
Collector-Emitter Voltage
VCER
150
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Base Current
IB
7.0
Adc
Collector Current
IC
10
Adc
Total Power Dissipation @ TA = 25
0C (1)
@ TC = 25
0C (2)
PT
6.0
117
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-55 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
1.5
0C/W
1)
Derate linearly 34.2 mW/
0C for TA > 250C
2)
Derate linearly 668 mW/
0C for TC > 250C
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Voltage
IC = 3.0 Adc
V(BR)CEO
140
Vdc
Collector-Emitter Breakdown Voltage
IC = 1.5 Adc, RBE = 100
V(BR)CER
150
Vdc
Collector-Emitter Breakdown Voltage
IC = 1.5 Adc, VEB = 1.5 Vdc
V(BR)CEX
160
Vdc
Collector-Base Cutoff Current
VCB = 140 Vdc, VEB = 1.5 Vdc
ICEX
1.0
mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
1.0
mAdc
TECHNICAL DATA
2N3442 JAN, JANTX, JANTXV
Processed per MIL-PRF-19500/370
NPN HIGH-POWER SILICON TRANSISTOR
TO-03 (TO-204AA)
MIL-PRF
QPL
DEVICES
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3444 | 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3467 | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3467 | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N3471 | 10 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2N3496 | 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3442 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 |
| 2N3442/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:High-Power Industrial Transistors |
| 2N3442_12 | 制造商:COMSET 制造商全称:Comset Semiconductor 功能描述:HIGH POWER INDUSTRIAL TRANSISTORS |
| 2N3442G | 功能描述:两极晶体管 - BJT 10A 140V 117W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3444 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors |
发布紧急采购，3分钟左右您将得到回复。