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参数资料
| 型号： | 2N3468L |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件页数： | 1/2页 |
| 文件大小： | 55K |
| 代理商： | 2N3468L |
TECHNICAL DATA
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/348
Devices
Qualified Level
2N3467
2N3467L
2N3468
2N3468L
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3467
2N3467L
2N3468
2N3468L
Unit
Collector-Emitter Voltage
VCEO
40
50
Vdc
Collector-Base Voltage
VCBO
40
50
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
1.0
Adc
Total Power Dissipation
@ TA = +25
0C(1)
@ TC = +25
0C(2)
PT
1.0
5.0
W
Operating & Storage Junction Temperature Range
Top, Tstg
-55 to +175
0C
1) Derate linearly 5.71 mW/
0C for TA > +250C
2) Derate linearly 28.6 mW/
0C for TC > +250C
TO-39* (TO-205AD)
2N3467, 2N3468
TO-5*
2N3467L, 2N3468L
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
2N3467, L
2N3468, L
V(BR)CBO
40
50
Vdc
Emitter-Base Breakdown Current
IE = 10 Adc
V(BR)EBO
5.0
Vdc
Collector-Emitter Breakdown Current
IC = 10 mAdc
2N3467, L
2N3468, L
V(BR)CEO
40
50
Vdc
Collector-Base Cutoff Current
VCB = 30 Vdc
ICBO
100
ηAdc
Collector-Emitter Cutoff Current
VEB = 3.0 Vdc, VCE = 30
ICEX
100
nAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3469 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 25V 5A 3PIN TO-5 - Bulk |
| 2N3470 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-5/16 |
| 2N3471 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 |
| 2N3472 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 10A I(C) | STR-5/16 |
| 2N3473 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 10A I(C) | STR-5/16 |
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