参数资料
型号: 2N3501CSM4G4
厂商: SEMELAB LTD
元件分类: 小信号晶体管
英文描述: 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: HERMETIC SEALED, CERAMIC, LCC3-4
文件页数: 2/3页
文件大小: 17K
代理商: 2N3501CSM4G4
2N3501CSM4
Prelim. 12/98
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IC = 10mA
IB = 0
IC = 10AIE = 0
IE= 10AIC = 0
VCB = 75V
IE = 0
VCB = 75V
IE = 0
TA = 150°C
VEB(off) = 4V
IC = 0
IC = 0.1mA
VCE = 10V
IC = 1mA
VCE = 10V
IC = 10mA
VCE = 10V1
IC = 150mA
VCE = 10V1
IC = 300mA
VCE = 10V1
IC = 10mA
IB = 1mA
IC = 50mA
IB = 5mA
IC = 150mA
IB = 15mA
IC = 10mA
IB = 1mA
IC = 50mA
IB = 5mA
IC = 150mA
IB = 15mA
VCE = 20V
IC = 20mA
f = 100MHZ
VCB = 10V
IE = 0
f = 1MHZ
VEB = 0.5V
IC = 0
f = 1MHZ
VCE = 10V
IC = 10mA
f = 1KHZ
VCE = 10V
IC = 10mA
f = 1KHZ
VCE = 10V
IC = 10mA
f = 1KHZ
VCE = 10V
IC = 10mA
f = 1KHZ
150
6
0.05
50
35
50
75
100
300
20
0.2
0.25
0.4
0.8
0.9
1.2
150
8
80
0.25
1.25
4
375
200
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
A
nA
V
MHZ
pF
x10-4
V(BR)CEO
Collector-Emitter Breakdown Voltage1
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
VCE(SAT)
Collector-Emitter Saturation Voltage1
VBE(SAT)
Base-Emitter Saturation Voltage1
fT
Current-Gain–Bandwidth Product2
Cobo
Output Capacitance
Cibo
Input Capacitance
hie
Input Impedance
hre
Voltage Feedback Ratio
hfe
Small-Signal Current Gain
hoe
Output Admittance
相关PDF资料
PDF描述
2N3501CSM4-JQR-B 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2N3501J 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N3501JX 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N3501L 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N3501 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
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