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参数资料
| 型号： | 2N3501J |
| 厂商： | SEMICOA CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封装： | HERMETIC SEALED, METAL CAN-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 320K |
| 代理商： | 2N3501J |
2N3501
Silicon NPN Transistor
Dat a Sheet
Rev. H.2
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
150
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
ICBO3
VCB = 150 Volts
VCB = 75 Volts
VCB = 75 Volts, TA = 150°C
10
50
A
nA
A
Collector-Emitter Cutoff Current
ICEO
VCE = 120 Volts
1
A
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 6 Volts
VEB = 4 Volts
10
25
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE7
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 1500 mA, VCE = 10 Volts
IC = 300 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
TA = -55°C
35
50
75
100
20
45
300
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 10 mA, IB = 1 mA
IC = 150 mA, IB = 15 mA
0.8
1.2
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 10 mA, IB = 1 mA
IC = 150 mA, IB = 15 mA
0.2
0.4
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 20 Volts, IC = 20 mA,
f = 100 MHz
1.5
8
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 10 Volts, IC = 10 mA,
f = 1 kHz
75
375
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
8
pF
Open Circuit Input Capacitance
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
80
pF
Noise Figure
NF1
NF2
VCE = 10 Volts, IC = 0.5 mA,
f = 1 kHz, Rg = 1 k
VCE = 10 Volts, IC = 0.5 mA,
f = 10 kHz, Rg = 1 k
16
6
dB
Switching Characteristics
Saturated Turn-On Time
tON
VEB = 5 Volts, IC = 150 mA,
IB1 = 15 mA
115
ns
Saturated Turn-Off Time
tOFF
IC = 150 mA, IB1=IB2=15 mA
1,150
ns
Semicoa
Corporation
Copyright
2010
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相关代理商/技术参数 |
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