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参数资料
| 型号： | 2N3501UB |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/2页 |
| 文件大小： | 108K |
| 代理商： | 2N3501UB |
2N3501UB
Silicon NPN Transistor
Dat a Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3501UBJ)
JANTX level (2N3501UBJX)
JANTXV level (2N3501UBJV)
JANS level (2N3501UBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 5620
Reference document:
MIL-PRF-19500/366
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
150
Volts
Collector-Base Voltage
VCBO
150
Volts
Emitter-Base Voltage
VEBO
6
Volts
Collector Current, Continuous
IC
300
mA
Power Dissipation, TA = 25
OC
Derate linearly above 25
OC
PT
.5
3.08
W
mW/
°C
Thermal Resistance
RθJA
325
°C/W
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
Copyright
2004
Semicoa
Rev. J.2
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3501UBJANS | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin CSOT-23 |
| 2N3501UBJANSR | 制造商:Microsemi Corporation 功能描述: |
| 2N3501UBJANTX | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin CSOT-23 |
| 2N3501UBJANTX-TR | 制造商:Semicoa Semiconductors 功能描述:2N3501UBJX |
| 2N3501UBJANTXV | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin SMD 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 150V 0.3A 3-Pin CSOT-23 |
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