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参数资料
| 型号： | 2N3503-JQR-BG4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件页数： | 2/3页 |
| 文件大小： | 41K |
| 代理商： | 2N3503-JQR-BG4 |
2N3502
2N3503
2N3504
2N3505
Document Number 3067
Issue: 1
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Collector to Base
Breakdown Voltage
Emmiter to Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
ICES
Collector Cutoff Current
Collector Reverse
Current
hFE
DC Current Gain
Collector Saturation
Voltage
VBE(sat)
Base Saturation Voltage
FT
Transition Frequency
Cob
Output Capacitance
ton
Turn On Time
toff
Turn Off Time
-60
-45
-5
-60
-45
0.07
10
0.05
10
140
270
115
160
300
135
200
100
150
300
80
120
50
70
50
100
-0.08
-0.25
-0.18
-0.4
-0.5
-1.6
-0.9
-1.0
-1.3
-2.0
2
2.50
4.5
8.0
30
40
65
100
2N3503 / 2N3505
2N3502 / 2N3504
2N3503 / 2N3505
2N3502 / 2N3504
VCE = -50V VBE = 0
2N3503 / 2N3505
VCE = -30V VBE = 0
2N3502 / 2N3504
IE = 0
VCB = -50V
2N3503 / 2N3505
t = 150°CVCB = -30V
2N3502 / 2N3504
IC = 10mA
VCE = -10V
IC = 50mA
VCE = -1.0V
IC = 1.0mA VCE = -10 V
IC = 150mA VCE = -10V
IC = 10AVCE = -10V
IC = 500mA VCE = -10 V
t = -55°C
IC = 50mA
VCE = -1.0V
IC = 50mA
IB = 2.5mA
IC = 150mA IB = 15mA
IC = 500mA IB = 50mA
IC = 50mA
IB = 2.5mA
IC = 150mA IB = 15mA
IC = 500mA IB = 50mA
IC = 50mA
VCE = -20V
f = 100MHZ
VCB = -10V IE = 0
IC = 300mA IB1 = 30mA
IB2 = -30mA
V
nA
A
—
V
—
pf
ns
ELECTRICAL CHARACTERISTICS (25°C free air temperature unless otherwise stated)
IC = 10Α
IE = 0
IE = 10Α
IC = 0
BVCBO
IC = 10mΑ
IB = 0
BVEBO
VCEO
ICBO(150)
VCE(sat)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N3504E4 | 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N3505E4 | 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N3504 | 600 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N3506L | SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3507A | SMALL SIGNAL TRANSISTOR, TO-205AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3504 | 功能描述:两极晶体管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3505 | 功能描述:两极晶体管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3506 | 制造商:Motorola 功能描述:3506 MOT PULL N5F3B |
| 2N3506_02 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N3506A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 3A 3PIN TO-39 - Bulk |
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