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| 型号： | 2N3506LJS |
| 厂商： | SEMICOA CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | HERMETIC SEALED, METAL CAN-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 414K |
| 代理商： | 2N3506LJS |
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3506L
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N3506LJ)
JANTX level (2N3506LJX)
JANTXV level (2N3506LJV)
JANS level (2N3506LJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed TO-5 metal can
Also available in chip configuration
Chip geometry 1506
Reference document:
MIL-PRF-19500/349
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
40
Volts
Collector-Base Voltage
VCBO
60
Volts
Emitter-Base Voltage
VEBO
5
Volts
Collector Current, Continuous
IC
3
A
Power Dissipation, TA = 25
OC
Derate linearly above 25OC
PT
1
5.71
W
mW/
°C
Power Dissipation, TC = 25
OC
Derate linearly above 25OC
PT
5
28.6
W
mW/
°C
Thermal Resistance
RθJA
175
°C/W
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
Semicoa Corporation
Copyright
2010
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