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参数资料
| 型号： | 2N3507 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 11K |
| 代理商： | 2N3507 |
2N3507
Bipolar NPN Device.
V
CEO =
50V
I
C = 3.0A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
50
V
I
C(CONT)
3.0
A
h
FE
@ (V
CE / IC)
30
120
-
f
t
60M
Hz
P
D
1
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
Bipolar NPN Device in a
Hermetically sealed TO39
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
TO39 (TO205AD)
PINOUTS
1 – Emitter
2 – Base
3 – Collector
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| 2N3507 | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3507_07 | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N3507A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 3A 3PIN TO-39 - Bulk |
| 2N3507AJANS | 制造商:Semicoa Semiconductors 功能描述:2N3507AJS |
| 2N3507AL | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 3A 3PIN TO-5 - Bulk |
| 2N3507AU4 | 功能描述:NPN TRANSISTOR 制造商:microsemi ire division 系列:军用，MIL-PRF-19500/349 包装:散装 零件状态:在售 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:3A 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1.5V @ 250mA，2.5A 电流 - 集电极截止（最大值）:1μA 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:30 @ 1.5A，2V 功率 - 最大值:1W 频率 - 跃迁:- 工作温度:-65°C ~ 200°C（TJ） 安装类型:表面贴装 封装/外壳:3-SMD，无引线 供应商器件封装:U4 标准包装:1 |
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