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参数资料
| 型号： | 2N3659 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.5 A, 170 V, NPN, Si, POWER TRANSISTOR, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 238K |
| 代理商： | 2N3659 |
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2N3659 Availability
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2N3659 Information
Category Transistors
2N3659 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 170
V(BR)CBO (V) : 220
I(C) Max. (A) : 500m
Absolute Max. Power Diss. (W) : 4.0
Maxim um Operating Tem p (шC) : 175ю
I(CBO) Max. (A) : 10nШ
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 20
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 10m
@V(CE) (V) (Test Condition) : 50
f(T) Min. (Hz) Transition Freq : 50M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-5
Mounting Style : T
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Lanuage Translator:
Did you Know...
Am erican Micro specializes in providing obsolete parts that have been discontinued by other m anufacturers. We love filling the dem and on the
“oldie-but-goodie” sem iconductors that National and Motorola have left behind. Call us today at (973) 377-9566 to find out if we can supply
your dem and for discontinued passive and active com ponents!
133 Kings Road, Madison, NJ 07940 USA (973) 377-9566 / Fax: (973) 377-3078
Copyright 2004 A merican Microsemiconductor Inc. A ll Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N366 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | TO-22VAR |
| 2N3660 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 30V 1.5A 3PIN TO-5 - Bulk |
| 2N3661 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 50V 1.5A 3PIN TO-5 - Bulk |
| 2N3662 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 25MA I(C) | TO-98 |
| 2N3663 | 功能描述:射频双极小信号晶体管 NPN RF 12V 50mA BULK RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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